sot-89 plastic-encapsulate transistors transistor ( pnp ) features low saturation voltage excellent dc current gain characteristics maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -6 v i c collector current -continuous -2 a p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-50 a, i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b v 05- 0= emitter-base breakdown voltage v (br)ebo i e =-50 a, i c =0 -6 v collector cut-off current i cbo v cb =-50v, i e 1.0- 0= a emitter cut-off current i ebo v eb =-5v, i c 1.0- 0= a dc current gain h fe v ce =-2v, i c =-500ma 82 270 collector-emitter saturation voltage v ce(sat) i c =-1a, i b v53.0- am05-= transition frequency f t v ce =-2v, i c =-0.5a, f=100mhz 200 mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz 36 pf classification of h fe rank q p range 072-021 081-28 qga pga gnikram sot-89 1. base 2. collector 3. emitter 1 2 3 willas willas electronic corp. 2012-10 2SA1797
typical characteristics willas electronic corp. 2012-10 -1 -10 1 10 100 1000 -1 -10 -100 -1000 -0.01 -0.1 -1 -0.0 -0.3 -0.6 -0.9 -1.2 -1 -10 -100 -1000 -0 -2 -4 -6 -8 -10 -0.0 -0.5 -1.0 -1.5 -2.0 -1 -10 -100 -1000 10 100 1000 -1 -10 -100 -1000 -0.1 -1 f=1mhz i e =0 / i c =0 t a =25 o c -20 c ob c ib v cb / v eb c ob / c ib capacitance c (pf) reverse voltage v (v) common emitter v ce =-2v t a =25 i c f t -70 transition f collector current i c (ma) p c t a collecto ambient temperature t a ( ) -2000 t a =100 o c t a =25 o c -2000 =20 v cesat i c collector-emitter saturation voltage v cesat (v) collector current i c (ma) common emitter v ce =-2v t a =25 o c t a =100 o c v be ?? i c collector current i c (ma) base-emitter voltage v be (v) common emitter t a =25 i b =-1ma collector current i c (a) collector-emitter voltage v ce (v) static characteristic -10ma -9ma -8ma -7ma -6ma -5ma -4ma -3ma -2ma common emitter v ce = -2v t a =25 o c t a =100 o c i c h fe dc current gain h fe collector current i c (ma) -2000 t a =100 o c t a =25 o c =20 -2 i c v besat base-emitter saturation voltage v besat (v) collector current i c (ma) -2000 sot-89 plastic-encapsulate transistors willas 2sa1
typical characteristics willas electronic corp. 2012-10 -1 -10 10 100 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 common emitter v ce =-2v t a =25 i c f t 200 -70 transition frequency f t (mhz) collector current i c (ma) p c t a collector power dissipation p c (w) ambient temperature t a ( ) sot-89 plastic-encapsulate transistors willas 2SA1797
outline drawing dimensions in inches and (millimeters) sot-89 rev.c .047(1.2) .031(0.8) .102(2.60) .091(2.30) .181(4.60) .173(4.39) .061ref (1.55)ref .023(0.58) .016(0.40) .060typ (1.50)typ .118typ (3.0)typ .197(0.52) .013(0.32) .017(0.44) .014(0.35) .063(1.60) .055(1.40) .154(3.91) .167(4.25) willas electronic corp. 2012-10 sot-89 plastic-encapsulate transistors willas 2SA1797
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